![]() ![]() However, with the further miniaturization of the electronic devices beyond the Moore’s law, conventional ferroelectrics suffer great challenge arising from the critical thickness effect, where the ferroelectricity is unstable if the film thickness is reduced to nanometer or single atomic layer limit. Hualing Zeng, Room temperature ferroelectric thin films are the key element of high-density nonvolatile memories in modern electronics. 4. Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.3. CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.2. Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei 230026, China Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei 230026, China. ![]() 1. International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei 230026, China International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei 230026, China.+ Author Affiliations + Find other works by these authors ![]()
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